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The BC856-QR is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It operates with a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device features a DC current gain (hFE) ranging from 220 to 475 at 2 mA and 5 V. It has a power dissipation rating of 250 mW and a transition frequency of 100 MHz. The component is housed in a TO-236AB (SOT-23) surface-mount package and meets AEC-Q101 automotive qualification standards.
Verify that the ordering suffix matches the required automotive grade specification. Confirm the package type corresponds to the design footprint. Ensure compliance with RoHS directives for environmental regulations. Check datasheet revisions for any updates to electrical characteristics or pin configurations before finalizing procurement.
Select this component when automotive qualification is mandatory for PNP switching tasks. Compare hFE ranges against circuit requirements to ensure adequate gain margins. Evaluate thermal management needs based on the 250 mW power dissipation limit. Consider the SOT-23 package dimensions for PCB layout constraints relative to alternative packages.
This part belongs to the BC856 family of PNP transistors, which are widely used as complements to NPN devices like the BC846 series. The -QR suffix typically denotes specific packaging and automotive qualification variants within the broader Nexperia portfolio. These transistors serve as fundamental building blocks for discrete logic and analog signal processing functions.
The maximum collector-emitter voltage (VCEO) is 65 V.
Yes, the BC856-QR is qualified according to the AEC-Q101 standard.
The DC current gain (hFE) ranges from a minimum of 220 to a maximum of 475 at 2 mA and 5 V.