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The BC856A-7-F is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features a collector-emitter voltage (VCEO) of -65 V and a continuous collector current (IC) of -100 mA. The device provides a DC current gain (hFE) range of 125 to 250 at IC = -2.0 mA and VCE = -5 V. Power dissipation is rated at 310 mW under standard conditions, with a transition frequency (fT) of 200 MHz.
Verify the specific suffix '-7-F' corresponds to the 3,000-unit reel packaging configuration. Confirm that the 'K3A' marking code matches the required batch identification. Ensure compliance with RoHS 3 and REACH regulations as specified in the manufacturer's documentation before finalizing procurement orders.
Select this component when a PNP transistor with a -65 V collector-emitter breakdown voltage is required. The BC856A variant offers a moderate hFE range of 125 to 250, suitable for general signal amplification. Consider complementary NPN types like the BC846A if push-pull configurations are necessary within the same design architecture.
This part belongs to the BC856A–BC858C series of PNP small-signal transistors from Diodes Incorporated. The series shares the SOT23 footprint but varies in breakdown voltage and gain ranges. The BC856A specifically targets applications requiring higher voltage tolerance compared to the BC857 or BC858 variants while maintaining low power consumption characteristics.
The datasheet explicitly identifies the BC858A-7-F as End-of-Life (EOL) and recommends substituting it with the BC857A-7-F. Verify pinout compatibility and electrical parameter alignment when replacing other family members.
The maximum collector-base voltage (VCBO) for the BC856A is -80 V.
Standard commercial parts are not designated for automotive use. Automotive-compliant versions are available separately under the BC856AQ designation.
The typical noise figure is 2 dB, measured at VCE = -5 V, IC = -200 µA, with a source resistance of 2 kΩ.