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Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A PG-SOT23-3-1
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23-3-1
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC856A-E6327 is a PNP silicon small-signal transistor manufactured by Infineon Technologies. It belongs to the BC856 series and is housed in an SOT-23 surface-mount package. The device features a maximum collector-emitter voltage of 45 V, a maximum collector-base voltage of 50 V, and an emitter-base voltage of 5 V. It supports a continuous DC collector current of 100 mA with a power dissipation rating of 330 mW. The component offers a minimum DC current gain (hFE) of 200 and a maximum of 420, with a transition frequency of 150 MHz. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- PNP silicon construction for general-purpose switching and amplification
- High DC current gain suitable for low-current applications
- Automotive qualification compliant with AEC-Q100 standards
Applications
- General-purpose signal amplification
- Switching circuits in consumer electronics
- Automotive electronic modules
Procurement Notes
Verify the specific suffix E6327 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm availability status as distribution channels may list limited stock or end-of-life conditions. Ensure compatibility with automated pick-and-place equipment using standard SOT-23 footprints. Cross-reference datasheet revisions to validate electrical parameters before final design integration.
Selection Notes
Select this component when a PNP transistor with moderate current handling and high gain is required in a compact SOT-23 form factor. The 45 V collector-emitter voltage rating suits low-voltage logic interfaces. Consider the AEC-Q100 qualification if the application demands automotive reliability standards. Compare hFE ranges against circuit requirements to ensure sufficient drive capability without excessive base current.
Part Context
This part is a member of the BC856 family of PNP transistors from Infineon. It shares the same physical package and basic electrical structure as other variants in the series, distinguished primarily by its specific current gain binning (A grade). The E6327 suffix indicates the specific ordering and packaging configuration used by distributors.
Replacement Considerations
- BC856AHTSA1
- BC856AE6327XTSA1
FAQ
Is the BC856A-E6327 qualified for automotive applications?
Yes, the BC856A-E6327 is qualified according to the AEC-Q100 standard for automotive use.
What is the maximum power dissipation of this transistor?
The maximum power dissipation is 330 mW at 25 °C ambient temperature.
Does this component support surface-mount technology?
Yes, it is designed for surface-mount installation in an SOT-23 package.
