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The BC856A is a PNP general-purpose small-signal transistor manufactured by Taiwan Semiconductor Corporation. It utilizes an epitaxial planar silicon process and is housed in a surface-mount SOT-23 (TO-236AB) package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. It features a minimum DC current gain (hFE) of 125, ensuring reliable amplification performance. The component operates within a junction temperature range of -55°C to +150°C and offers low saturation voltage characteristics suitable for efficient switching applications.
Verify the manufacturer marking on the component body to confirm Taiwan Semiconductor origin. Ensure the suffix matches the required hFE binning specification. Confirm RoHS compliance status through the official datasheet before procurement. Validate package dimensions against the SOT-23 standard to prevent mounting errors during assembly.
Select this component when a PNP transistor with 65V breakdown and 100mA continuous current capability is required. The A-grade binning provides a guaranteed minimum gain of 125, suitable for moderate amplification needs. Consider thermal derating for high-power dissipation scenarios. Verify compatibility with existing NPN counterparts if designing complementary pairs.
This part belongs to the widely adopted BC856 series family of PNP transistors. It serves as the direct complement to the BC846 NPN series. The series is characterized by its versatility in both analog and digital applications. The SOT-23 form factor allows for high-density PCB layouts. It is a standard industry component available from multiple semiconductor manufacturers.
The BC856A guarantees a minimum DC current gain (hFE) of 125.
Yes, it is designed for AF amplifier applications due to its frequency characteristics and gain stability.
The maximum collector-emitter voltage (VCEO) is rated at 65 V.