BC856AE6327

Overview

The BC856AE6327 is a dual PNP silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-363 surface-mount package. It features a maximum collector-emitter voltage of 65 V and a collector-base voltage of 80 V. The device supports a continuous collector current of 100 mA with a peak current of 200 mA. Power dissipation is rated at 250 mW. The transition frequency is 250 MHz, and the DC current gain ranges from 200 to 630.

Feature Summary

• Dual PNP configuration for compact circuit integration
• High breakdown voltage capability suitable for general-purpose switching
• Low noise performance optimized for audio applications

Applications

• Audio pre-amplifier stages
• General-purpose switching circuits
• Signal processing interfaces

Procurement Notes

Verify the specific suffix 'A' against official Infineon documentation to confirm the exact hFE binning and electrical tolerances. Confirm the SOT-363 package type matches the design footprint. Check for end-of-life status or alternative recommendations directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a dual PNP transistor is required in a small outline package. Ensure the 65 V collector-emitter rating meets the circuit's voltage requirements. Verify that the 250 mW power dissipation limit is sufficient for the intended thermal environment and duty cycle.

Part Context

This part belongs to the BC856 series of dual PNP transistors. It shares the SOT-363 form factor with other variants but differs in gain classification and specific electrical limits. It is designed for low-noise and general-purpose applications requiring high reliability.

Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives. Generic equivalents may not match the specific hFE range or noise characteristics.