BC856AW-G

Overview

The BC856AW-G is a PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-323 surface-mount package. The device supports a maximum continuous collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 65 V, with a collector-base voltage (VCBO) of 65 V and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 150 mW, and the transition frequency (fT) reaches 100 MHz. DC current gain (hFE) ranges from 220 to 440. Operating temperatures span from -65°C to +150°C.

Feature Summary

• Designed for switching and audio frequency amplifier applications
• Suitable for automated insertion processes

Applications

• Switching circuits
• Audio frequency amplifiers

Procurement Notes

Verify the specific suffix 'AW' against official datasheets to confirm the exact hFE binning range required for your design. Ensure the SOT-323 footprint matches your PCB layout. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement specifications.

Selection Notes

Select this component when a PNP transistor with a 65 V collector-emitter rating is needed in a compact SOT-323 package. Consider the 100 mA current limit and 150 mW power dissipation constraints. Verify that the hFE gain range aligns with circuit biasing requirements compared to standard general-purpose alternatives.

Part Context

This part belongs to the BC856 series of PNP transistors produced by Comchip Technology. It shares the SOT-323 form factor with related models like the BC857 and BC858, which offer different voltage or gain characteristics. The 'AW' suffix typically denotes specific gain grading within the product family.

Replacement Considerations

Cross-reference with other manufacturers offering BC856AW equivalents in SOT-323 packages. Verify pinout compatibility and ensure thermal performance meets system requirements when substituting.