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The Diotec Semiconductor BC856AW is a surface-mount general-purpose PNP bipolar junction transistor housed in an SOT-323 package. It supports a collector current of -100 mA and offers three distinct DC current gain groups (A, B, C) with minimum hFE values of 125, 220, and 420 respectively at -IC = 2 mA. The device features a maximum collector-emitter voltage of -65 V, a power dissipation rating of 200 mW, and a transition frequency of 100 MHz. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official Diotec documentation to confirm compliance status. Standard versions are commercial/industrial grade, while suffixes such as -Q or -AQ indicate AEC-Q101 qualification. Ensure the selected variant matches the required reliability level for the target application environment before finalizing procurement.
Select the appropriate current gain group based on circuit requirements: Group A provides a minimum hFE of 125, Group B requires 220, and Group C demands 420. Confirm that the -65 V collector-emitter breakdown voltage aligns with the system's maximum operating limits. Verify thermal management capabilities given the 200 mW power dissipation constraint in the SOT-323 package.
This component belongs to the BC856W...BC859CW series of SMD universal PNP transistors manufactured by Diotec Semiconductor. The series shares common mechanical data and packaging standards but varies in voltage ratings and complementary NPN pairings. The BC856AW specifically denotes the highest voltage variant (-65 V) within this family.
Officially recommended complementary NPN transistors include the BC846W, BC847W, BC848W, and BC849W. Cross-referencing with other manufacturers' BC856 equivalents requires verifying pinout compatibility and ensuring electrical parameters meet or exceed the specified limits.