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The BC856B is a general-purpose PNP bipolar junction transistor manufactured by Diotec Semiconductor. It operates in the SOT-23 (TO-236) surface-mount package and supports a collector-emitter voltage of 65 V with a maximum DC collector current of 100 mA. The device features three distinct DC current gain groups, with Group B providing a minimum hFE of 150 at 10 µA and 220 at 2 mA. It has a power dissipation rating of 300 mW on a PCB and functions within a temperature range of -55°C to +150°C.
Verify that the specific part number matches the required current gain group, as the 'B' suffix designates a specific hFE range. Confirm compliance with environmental standards such as RoHS and REACH if applicable to your manufacturing process. Ensure the selected package variant aligns with your board layout constraints.
Select this component when a standard PNP transistor with a 65 V breakdown voltage is required. The BC856B provides a balanced performance profile suitable for general analog and digital tasks. Consider the thermal resistance characteristics and ensure adequate copper pad area on the PCB to maintain safe operating temperatures under load.
This component belongs to the BC856 through BC860 series of SMD general-purpose PNP transistors. It serves as the industrial-grade counterpart to commercial variants and complements NPN transistors like the BC846 series. The BC856B specifically targets applications requiring moderate voltage handling and reliable switching capabilities in compact electronic designs.
BC856C/-Q/-AQ
The 'B' suffix identifies the specific DC current gain group (Group B), which guarantees a minimum hFE of 150 at an IC of 10 µA and 220 at an IC of 2 mA.
Standard versions are not explicitly qualified for automotive use. For AEC-Q101 compliant or qualified versions, you must select parts with the '-Q' or '-AQ' suffixes.
The maximum power dissipation is 300 mW when mounted on a printed circuit board with the minimum recommended pad layout.