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The BC856B-QR is a single PNP bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a TO-236AB (SOT-23) surface-mount package. The device supports a maximum DC collector current of 100 mA and withstands a collector-emitter voltage of 65 V. Key electrical parameters include a collector-base voltage of 80 V, an emitter-base voltage of 5 V, and a saturation voltage of 250 mV. Power dissipation is rated at 250 mW with a transition frequency of 100 MHz. It operates between -65°C and +150°C and meets AEC-Q101 qualification standards.
Verify the specific suffix 'QR' to confirm the reel packaging format and AEC-Q101 automotive qualification status. Ensure the TO-236AB package matches the target PCB layout. Confirm RoHS compliance details as required by project specifications before finalizing procurement orders.
Select this component when automotive-grade reliability is required for low-voltage PNP applications. The 100 mA current rating suits moderate load switching tasks. Compare against standard BC856B variants if automotive certification is unnecessary. Verify thermal management capabilities within the 250 mW dissipation limit for the intended operating environment.
This part belongs to the BC856 series of general-purpose PNP transistors from Nexperia. It serves as the automotive-qualified counterpart to the commercial BC856B. The series provides complementary NPN options like the BC846B. These devices are widely used in consumer and industrial electronics requiring small signal processing.
BC856B is the direct commercial equivalent without automotive qualification. BC856BW,115 offers the same electrical characteristics in a SOT-323 package.