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The Nexperia BC856B,215 is a PNP general-purpose bipolar junction transistor (BJT) housed in an SOT-23 (TO-236AB) surface-mount package. It features a maximum collector-emitter voltage of 45 V and a collector-base voltage of 50 V. The device supports a continuous DC collector current of 100 mA with a power dissipation rating of 250 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 220 at 2 mA and 5 V, and a transition frequency of 100 MHz. Operating temperatures range from -65°C to +150°C.
Verify the specific voltage rating against the datasheet, as some sources cite 65 V while official specifications list 45 V for this variant. Confirm the suffix '215' corresponds to the standard tape-and-reel packaging format. Ensure compliance with RoHS directives and check for any recent production changes or assembly site updates documented by Nexperia before finalizing procurement orders.
Select this component when a low-voltage PNP transistor is required in a compact SOT-23 footprint. It serves as the complement to the BC846B NPN transistor. Consider the 45 V collector-emitter limit rather than higher voltage variants if circuit constraints are strict. Verify that the 100 mA current rating meets load requirements and that the thermal performance aligns with the 250 mW dissipation capability in the target application environment.
This part belongs to the Nexperia BC856 series of general-purpose transistors. The series includes variants with different gain ranges (A, B, C) and complements the BC846 NPN family. These devices are widely used in consumer electronics and industrial control due to their small size and reliable performance in standard signal processing tasks.
Pin-to-pin compatible alternatives include the BC857B,215 and BC856A,215. Other manufacturers produce equivalent parts such as the MMBT3906,215. Verify voltage and gain specifications match the original design requirements before substitution.