SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC856BFSWQ-7 is a dual PNP bipolar junction transistor manufactured by Diodes Incorporated. It is housed in an SOT-363 (SC-88) surface-mount package with six terminals. The device supports a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 65 V. Key electrical ratings include a collector-base voltage (VCBO) of 80 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (Pd) of 200 mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'SWQ' against the manufacturer's official datasheet to confirm AEC-Q101 automotive qualification status. Ensure the ordering part number matches the exact pinout and gain binning requirements for your design. Cross-reference the package dimensions with your PCB footprint library to prevent assembly errors.
Select this component when a dual PNP solution is required in a minimal footprint. The AEC-Q101 qualification makes it suitable for automotive systems where long-term reliability is critical. Compare the 65V rating against system voltage peaks to ensure adequate headroom. Consider the 200mW power dissipation limit when designing thermal management strategies for dense layouts.
This component belongs to the BC856 series of small-signal PNP transistors. The 'Q' suffix typically denotes automotive-grade variants that meet stricter quality and reliability standards compared to standard commercial grades. It serves as a dual-transistor alternative to single packages, reducing board space while maintaining performance characteristics similar to the BC856B family.
Check for BC856BSWQ-7 or BC856CSWQ-7 if different hFE gain bins are required. Verify compatibility with BC856BW from Nexperia, noting potential differences in packaging or specific automotive certification levels.