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The BC856BHE3-TP is a PNP bipolar junction transistor manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device is qualified to AEC-Q101 standards for automotive applications. Key electrical ratings include a maximum collector-emitter voltage (Vceo) of 65 V, a maximum collector-base voltage (Vcbo) of 80 V, and a maximum emitter-base voltage (Vebo) of 5 V. The component supports a maximum DC collector current of 100 mA with a power dissipation rating of 310 mW.
Verify the specific suffix 'HE3-TP' against official Micro Commercial Components documentation to confirm lead-free status and tape-and-reel packaging specifications. Ensure the selected variant matches the required hFE binning for the intended circuit gain requirements. Cross-reference the AEC-Q101 qualification data directly from the manufacturer's datasheet to validate suitability for automotive environmental conditions.
Select this component when a PNP transistor with 65 V collector-emitter breakdown and 100 mA continuous current capability is required in a compact SOT-23-3 footprint. The AEC-Q101 qualification makes it suitable for automotive environments. Verify that the 310 mW power dissipation rating aligns with the thermal management design of the target application board.
This part belongs to the BC856 series of small-signal PNP transistors produced by Micro Commercial Components. The series is designed for general-purpose switching and amplification tasks. The HE3-TP designation indicates a lead-free product compliant with RoHS directives, packaged in the standard SOT-23 form factor widely used in consumer and industrial electronics.
The maximum collector-base voltage (Vcbo) is 80 V.
Yes, the component is qualified according to the AEC-Q101 standard.