SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC856BM3-TP is a PNP general-purpose small-signal transistor manufactured by Micro Commercial Components (MCC). It utilizes the SOT-723 surface-mount package and operates with a maximum collector current of 100 mA. The device features a collector-emitter voltage rating of -65 V, a collector-base voltage of -80 V, and an emitter-base voltage of -5 V. Maximum power dissipation is rated at 265 mW at 25°C ambient temperature. The transition frequency is specified at 100 MHz, and it supports an operating junction temperature range from -55°C to +150°C.
Verify that the ordering suffix 'TP' corresponds to tape-and-reel packaging as documented in the official datasheet. Confirm the specific gain bin 'B' matches circuit requirements. Ensure procurement channels are authorized MCC distributors to guarantee genuine parts and full traceability. Check for updated PCNs regarding packaging or marking changes before finalizing orders.
Select this component for designs requiring a compact PNP transistor in an SOT-723 footprint. The BC856BM3-TP offers a balance of moderate current handling and high breakdown voltage suitable for low-power analog and digital tasks. Consider the thermal resistance and derating curves when designing for enclosed environments or elevated ambient temperatures.
This part belongs to the BC856AM3 through BC858CM3 series of plastic-encapsulated transistors from Micro Commercial Components. The series covers various DC current gain bins (A, B, C) within the same physical package. These devices are designed for use in portable electronics and consumer goods where space constraints and environmental compliance are critical design factors.
BC856BW-TP
The 'M3' suffix designates that the device is lead-free and RoHS compliant.
No, the transition frequency is limited to 100 MHz, making it suitable for general-purpose switching and audio frequencies rather than RF.
The device dissipates 265 mW at 25°C ambient temperature; users must consult the power derating curve for operation above this temperature.