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The onsemi BC856BMTF is a PNP epitaxial silicon transistor housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -65 V, a collector-base voltage of -80 V, and a maximum DC collector current of -100 mA. The device has a power dissipation rating of 310 mW and operates within a junction temperature range up to 150 °C. Its minimum DC current gain (hFE) is 200 at -2 mA collector current, with a transition frequency of 150 MHz.
Verify that the ordering suffix 'TF' corresponds to tape and reel packaging containing 3000 units per reel. Confirm the 'M' suffix indicates the matte type package finish. Ensure the 'B' suffix matches the required hFE classification range of 200 to 450 for your specific design needs.
Select this component when a PNP transistor with a -65 V collector-emitter breakdown is required in a compact SOT-23 footprint. The BC856B variant provides a guaranteed minimum hFE of 200, making it suitable for general-purpose amplification where moderate gain consistency is necessary alongside low noise performance characteristics.
This part belongs to the BC856-BC860 family of PNP epitaxial silicon transistors originally manufactured by Fairchild Semiconductor, now integrated into ON Semiconductor's portfolio. The family includes variants with different voltage ratings and noise specifications, such as the BC859 and BC860 which offer lower noise figures.
The 'B' suffix denotes the DC current gain (hFE) classification, specifying a minimum gain range of 200 to 450.
It is supplied in a Tape & Reel format with a quantity of 3000 pieces per reel.
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.