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The BC856BT,115 is a single PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes the SOT-416 (SC-74) surface-mount package and operates with silicon technology. Key electrical ratings include a maximum collector-emitter voltage of -65 V, a collector-base voltage of -80 V, and an emitter-base voltage of -5 V. The device supports a continuous DC collector current of -100 mA and dissipates up to 150 mW of power. It features a minimum DC current gain (hFE) of 125 at specified test conditions and a transition frequency of 100 MHz. The component functions reliably within an operating temperature range from -65 °C to +150 °C.
Verify the specific suffix 'BT' against official Nexperia documentation to confirm the exact binning or tape-and-reel specifications. Ensure the ordering part number matches the required hFE gain class and packaging format. Cross-reference the manufacturer's datasheet for the BC856 series to validate all absolute maximum ratings before integration into the design.
Select this component for designs requiring a standard PNP transistor with low voltage operation and moderate current capacity. The SOT-416 package offers space efficiency for dense PCB layouts. Compare the 150 mW power dissipation limit against thermal requirements. Verify that the -65 V breakdown voltage meets the circuit's peak voltage demands.
This part belongs to the BC856 family of general-purpose PNP transistors produced by Nexperia. The family includes variants such as BC856A, BC856B, and BC856C, which differ primarily in their DC current gain ranges. The BC856BT variant specifically denotes the single-transistor version packaged in the SOT-416 form factor, distinct from dual or triple configurations found in other packages like SOT-363.
Compatible substitutes include BC856BS,115 and BC856S,115 for dual PNP configurations in different packages. For single PNP replacements, consider BC856W,115 in the SOT-323 package.