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The BC856BW/DG/B2,115 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device utilizes the SOT-323 (SC-70) surface-mount package. Key electrical characteristics include a collector-base voltage of 80 V, an emitter-base voltage of 5 V, and a transition frequency of 100 MHz. Power dissipation is rated at 200 mW, with a DC current gain ranging from 220 to 475.
Verify the specific suffix against official Nexperia documentation to confirm exact binning and packaging details. Ensure the component matches the required SOT-323 footprint and lead configuration for your PCB layout. Confirm RoHS compliance status through the manufacturer's datasheet before finalizing procurement specifications.
Select this component when a small form factor PNP transistor is required for low-power applications. The 100 mA current rating suits moderate load switching. Verify that the 65 V breakdown voltage meets circuit requirements. Consider the SOT-323 package constraints regarding thermal dissipation and soldering profiles during design integration.
This part belongs to the Nexperia BC856 series of general-purpose PNP transistors. It serves as the complement to NPN devices like the BC846. The series offers various gain bins and package options, including SOT-23 and SOT-323, providing flexibility for different board space and performance needs in consumer and industrial electronics.
Compatible substitutes include BC856B-QR and BC856BW,115. Verify pinout compatibility and electrical parameters such as hFE ranges and power ratings before substitution.