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The BC856BW-G is a single PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-323 surface-mount package. The device supports a maximum DC collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 65 V, with a collector-base voltage (VCBO) of 80 V and an emitter-base voltage (VEBO) of 5 V. Key electrical characteristics include a transition frequency (fT) of 100 MHz, a power dissipation rating of 150 mW, and a DC current gain (hFE) ranging from 220 to 475. It operates within a temperature range of -65°C to +150°C.
Verify the manufacturer marking and date code against official Comchip Technology documentation upon receipt. Confirm RoHS compliance status through the provided Certificate of Analysis or datasheet revision history. Ensure storage conditions maintain moisture sensitivity level integrity prior to soldering. Cross-reference part numbers with authorized distributors to confirm authenticity and traceability.
Select this component when a PNP transistor with 65 V collector-emitter voltage and 100 mA continuous current capacity is required. The SOT-323 package is appropriate for high-density PCB layouts. Consider the hFE range of 220 to 475 for biasing calculations. Verify that the 150 mW power dissipation limit aligns with the thermal design of the target application.
This component belongs to the BC856 series of small-signal transistors. It serves as a specific variant within Comchip Technology's discrete semiconductor portfolio, offering standardized performance metrics for common electronic circuit designs. The series is widely recognized for its reliability in consumer and industrial electronics.
SBC856BWT1G by onsemi is documented as a direct substitute. Other potential equivalents include BC856BW by Diotec Semiconductor and BC856W,135 by Nexperia USA Inc. Verify pinout compatibility and electrical parameter overlaps before substitution.