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The BC856BW_R1_00001 is a PNP general-purpose bipolar junction transistor manufactured by Panjit International Inc. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 65 V, a maximum DC collector current (IC) of 100 mA, and a power dissipation (Pd) of 250 mW. The device features a collector-base voltage (VCBO) of 80 V and an emitter-base voltage (VEBO) of 6 V. It has a gain-bandwidth product (fT) of 200 MHz and a collector-emitter saturation voltage of 650 mV. The operating temperature range spans from -55°C to +150°C. This component is AEC-Q101 qualified for automotive applications.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm reel packaging specifications and tape dimensions. Ensure that the AEC-Q101 qualification status aligns with your project's automotive grade requirements. Cross-reference the SOT-323-3 footprint with your PCB design guidelines to guarantee mechanical compatibility during surface mount assembly processes.
Select this component when a PNP transistor with 65 V breakdown and 100 mA current capacity is required in a small outline package. The AEC-Q101 qualification makes it suitable for automotive environments where thermal stability up to 150°C is necessary. Consider the 200 MHz transition frequency for high-speed switching applications within the specified power dissipation limits of 250 mW.
This part belongs to the BC856 series of PNP transistors produced by Panjit International Inc. The BC856 family is widely recognized for general-purpose switching and amplification tasks. The specific model BC856BW_R1_00001 denotes the standard commercial/automotive grade variant packaged in reels, distinct from other suffixes that may indicate different packaging or testing criteria.
BC856BW-AU_R1_000A1