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The BC856BWT1 is a PNP silicon general-purpose transistor manufactured by onsemi. It operates with a maximum collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device features a minimum DC current gain (hFE) of 125 at an IC of -10 mA and VCE of -5.0 V. It is housed in the SC-70/SOT-323 surface-mount package, designed for low-power applications. The component is Pb-free, halogen-free, and RoHS compliant.
Verify the specific ordering suffix to confirm packaging quantity and automotive qualification status. The standard BC856BWT1G variant is supplied in tape and reel packaging with a quantity of 3,000 units. Prefixes such as S or NSV indicate AEC-Q101 qualification and PPAP capability for automotive applications. Ensure the part marking matches the ordered device code.
Select this component when a PNP small-signal transistor with a -65 V collector-emitter voltage rating is required. It is suitable for low-power surface mount designs where a minimum hFE of 125 is sufficient. Consider the SC-70/SOT-323 footprint constraints and thermal resistance characteristics during PCB layout.
This component belongs to the BC856/BC857/BC858 family of general-purpose PNP transistors from onsemi. These devices share similar physical packaging and basic electrical structures but differ in breakdown voltage ratings and current gain bins. The BC856 variant specifically offers the highest voltage tolerance within this series.
Direct substitutes include BC856BWT1G from other manufacturers offering identical pinouts and electrical specifications. Cross-reference datasheets to ensure compatibility with SC-70/SOT-323 footprints and verify that replacement parts meet the same Pb-free and RoHS compliance standards.