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The BC856CW is a single PNP general-purpose bipolar junction transistor manufactured by Diotec Semiconductor. It is housed in an SOT-323 surface-mount package and supports a maximum collector current of 100 mA with a collector-emitter voltage rating of 65 V. The device features a power dissipation capacity of 200 mW, a transition frequency of 100 MHz, and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'CW' against the manufacturer's datasheet to confirm exact binning or tolerance specifications. Confirm RoHS compliance status directly with Diotec Semiconductor documentation prior to final procurement decisions.
Select this component when a PNP transistor with 65V breakdown voltage and 100mA continuous current capability is required in an SOT-323 footprint. Ensure the design accounts for the 200mW thermal dissipation limit under expected load conditions.
This part belongs to the BC856 series of NPN/PNP complementary pairs often used in logic and interface circuits. The BC856 variant specifically provides the PNP counterpart to the BC846 NPN transistor, sharing similar packaging and general performance characteristics for balanced differential designs.
BC856BW
The maximum collector-emitter voltage (VCEO) is 65 V.
No, the BC856CW is exclusively available in the SOT-323 surface-mount package.