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The BC856S-QF is a PNP/PNP matched double transistor manufactured by Nexperia USA Inc. It utilizes silicon technology and is housed in a TSSOP-6 (SOT363) surface-mount package. The device supports a maximum DC collector current of 100 mA with a collector-emitter voltage rating of 65 V and a collector-base voltage of 80 V. The emitter-base voltage is rated at 5 V, while the collector-emitter saturation voltage is specified at 100 mV. Power dissipation reaches 300 mW, and the gain-bandwidth product is 100 MHz. Operating temperatures range from -65 °C to +150 °C.
Verify the specific suffix QF against official Nexperia documentation to confirm automotive qualification status and tape-and-reel specifications. Ensure the ordering part number matches the required RoHS compliance and REACH registration details before finalizing procurement orders.
Select this component when matched transistor characteristics are critical for circuit symmetry. The SOT363 package offers space efficiency compared to standard discrete packages. Verify thermal management requirements given the 300 mW power dissipation limit in the small outline package.
This component belongs to the BC856 series of matched double transistors designed as drop-in replacements for standard discrete pairs. The QF suffix typically indicates specific packaging or automotive qualification variants within the Nexperia portfolio, distinct from the standard BC856S general-purpose devices.
BCM856BSH serves as a functional equivalent offering similar matched PNP/PNP characteristics in the same SOT363 package. Verify pinout compatibility and thermal performance differences before substitution.