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Product Detailed Parameters
- Description：TRANS 2PNP 65V 0.1A PG-SOT363-PO
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：65V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：250mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：-
- Qualification：-
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Overview
The BC856SE6327BTSA1 is a small-signal PNP bipolar junction transistor manufactured by Infineon Technologies. It features a dual configuration within an SOT-363-6 surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. Key electrical parameters include a DC current gain (hFE) range of 200 to 630, a transition frequency (fT) of 250 MHz, and a power dissipation rating of 250 mW. It operates reliably across a temperature range from -65 °C to +150 °C.
Feature Summary
- Dual PNP transistor configuration in a compact SMD package
- High DC current gain for signal amplification
- Wide operating temperature range suitable for industrial applications
Applications
- General-purpose signal amplification
- Switching circuits
- Audio pre-amplifiers
Procurement Notes
Verify the exact part number against official Infineon documentation before procurement. Confirm that the suffix BTSA1 corresponds to the specific tape-and-reel packaging variant required for your assembly line. Ensure compatibility with RoHS standards if mandated by your project specifications.
Selection Notes
Select this component when a dual PNP configuration is required in a minimal footprint. The high hFE range makes it suitable for low-current amplification tasks. Compare its 250 mW power dissipation limit against thermal requirements to ensure adequate heat management in the final design.
Part Context
This part belongs to the BC856 series of general-purpose transistors. It shares similar electrical characteristics with other variants in the family but differs in packaging and binning. The E6327 suffix typically denotes specific manufacturing or packaging details defined by Infineon.
Replacement Considerations
Direct substitutes may include other dual PNP transistors in SOT-363 packages such as the BC856S or BC857S, provided pinout compatibility and electrical ratings are verified. Always consult the manufacturer's cross-reference guide for approved alternatives.
