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BC856T,115 is a single PNP bipolar junction transistor (BJT) manufactured by NXP USA Inc. It operates in the SOT-23 package with three pins. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of -45 V. Key electrical parameters include a minimum DC current gain (hFE) of 125 at specified test conditions and a transition frequency of 100 MHz. Power dissipation is rated at 250 mW. The component functions within an operating temperature range from -65 °C to +150 °C.
Verify the specific suffix '115' against official NXP documentation to confirm tape-and-reel specifications and manufacturing origin. Ensure compatibility with RoHS directives and check for any recent product change notices affecting pinout or material composition before finalizing procurement orders.
Select this component when a single PNP transistor with moderate current handling and high gain is required. Compare hFE ranges and saturation voltages against circuit requirements. Consider thermal management capabilities given the 250 mW power dissipation limit in the SOT-23 package.
The BC856 series belongs to NXP's portfolio of general-purpose small-signal transistors. These devices are widely used in consumer electronics and industrial equipment. The BC856T variant specifically denotes the single-transistor configuration in the SOT-23 package, distinct from dual or triple configurations in other packages.
Check for direct cross-reference part numbers from Nexperia or other manufacturers offering identical SOT-23 PNP specifications. Verify that substitute components match the -45 V rating and 100 mA current limits.