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Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A SOT-323
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The BC856W,115 is a PNP general-purpose transistor manufactured by Nexperia in the SOT323 (SC-70) surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device offers a DC current gain range of 125 to 475 at VCE = -5 V and IC = -2 mA. Key electrical characteristics include a collector-base breakdown voltage of -80 V, an emitter-base voltage limit of -5 V, and a total power dissipation of 200 mW at 25 °C ambient temperature.
Feature Summary
- PNP general-purpose transistor designed for low current applications
- Compact SOT323 (SC-70) plastic surface-mounted package
- High DC current gain suitable for amplification tasks
Applications
- General-purpose switching
- Amplification circuits
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel quantity. Confirm the component status as production data sheet information before initiating designs. Ensure the selected variant aligns with the specified hFE binning requirements for the target application circuit.
Selection Notes
Select this component when space constraints require the SC-70 footprint. Choose based on the required collector-emitter voltage rating of 65 V. Verify that the minimum DC current gain meets the circuit design specifications. Consider thermal resistance limits for high-duty cycle operations.
Part Context
This part belongs to the BC856W/BC857W/BC858W family of PNP transistors. It serves as the complement to the BC846W NPN transistor within the same small outline package series. The 'W' designation indicates the SOT323 package configuration.
Replacement Considerations
Direct functional substitutes within the same package include BC857W and BC858W, though their voltage ratings differ. Cross-reference datasheets to ensure voltage and gain parameters meet specific circuit requirements before substitution.
FAQ
What is the pin configuration for the BC856W?
Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
What is the maximum collector-base breakdown voltage?
The maximum collector-base breakdown voltage (V(BR)CBO) is -80 V.
Is this component automotive qualified?
No, unless explicitly stated otherwise in the data sheet, this product is not suitable for automotive use or qualified according to automotive testing requirements.
