ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A SOT-323
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
Download product information
Overview
The BC856W,135 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. It operates within a collector-emitter voltage (VCEO) of -65 V and supports a maximum continuous collector current (IC) of -100 mA with peak currents up to -200 mA. The device features a DC current gain (hFE) ranging from 125 to 475 at VCE = -5 V and IC = -2 mA. Key electrical characteristics include a collector-base breakdown voltage (V(BR)CBO) of -80 V, an emitter-base breakdown voltage (V(BR)EBO) of -5 V, and a transition frequency (fT) of 100 MHz. Total power dissipation is rated at 200 mW, with a junction temperature limit of 150 °C.
Feature Summary
- Low current handling capability suitable for small signal applications
- Low voltage operation designed for general-purpose switching
- Compact SOT323 surface-mounted package
Applications
- General-purpose switching
- Amplification circuits
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm reel specifications and manufacturing site codes. Ensure compatibility with standard SOT323 footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement orders.
Selection Notes
Select this component when a PNP transistor with a -65 V collector-emitter rating and -100 mA current capacity is required in a compact SMD form factor. Consider the hFE range of 125 to 475 for biasing requirements. Verify thermal resistance limits if operating near maximum power dissipation conditions.
Part Context
The BC856W belongs to the BC85xW series of PNP general-purpose transistors produced by Nexperia. These devices are housed in the SOT323 (SC-70) plastic surface-mounted package. The series includes complementary NPN types such as the BC846W. This family is designed for low-voltage, low-current applications requiring small physical footprint solutions.
Replacement Considerations
BC856AW,115
FAQ
What is the pin configuration for the BC856W?
Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
What is the maximum collector-base breakdown voltage?
The maximum collector-base breakdown voltage (V(BR)CBO) is -80 V.
What is the typical noise figure for this transistor?
The typical noise figure is 2 dB at IC = -200 µA, VCE = -5 V, RS = 2 kΩ, f = 1 kHz, and B = 200 Hz.
