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The Nexperia BC857,235 is a PNP general-purpose bipolar junction transistor (BJT) housed in an SOT-23 surface-mount package. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device exhibits a minimum DC current gain (hFE) of 220 at specified test conditions. Electrical characteristics include a collector-base breakdown voltage of 50 V, an emitter-base breakdown voltage of 5 V, and a transition frequency of 100 MHz. Power dissipation is rated at 250 mW, with an operating temperature range spanning from -65°C to +150°C.
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and binning. Confirm RoHS compliance status and lead-free specifications directly with authorized distributors. Ensure the component matches the required hFE grading for the intended circuit design before finalizing procurement orders.
Select this component when a PNP transistor with moderate voltage ratings and high current gain is required in a compact SOT-23 footprint. Consider the 250 mW power dissipation limit and thermal management requirements for the specific application environment. Verify compatibility with the NPN complement BC847 if complementary pairs are needed.
This part belongs to the BC857 series of general-purpose PNP transistors manufactured by Nexperia. The series offers various gain grades and packaging options to suit different design constraints. The BC857,235 specifically denotes the SOT-23 package variant within this family, widely used in consumer and industrial electronics.
Compatible substitutes include other BC857 variants with matching SOT-23 packages and similar electrical parameters. Verify pinout compatibility and ensure the replacement meets or exceeds the original voltage and current ratings.