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The BC857AFSW-7 is a PNP bipolar junction transistor manufactured by Diodes Incorporated. It utilizes epitaxial die construction and is housed in an SOT-323 surface-mount package. The device supports a maximum collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 45 V. Additional electrical ratings include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation capability of 200 mW. The component operates within a temperature range of -65°C to +150°C and meets AEC-Q101 automotive reliability standards.
Verify the specific suffix 'FSW' against official Diodes Incorporated documentation to confirm exact tape-and-reel specifications and marking codes. Ensure that the ordering information matches the required packaging format for automated assembly processes. Cross-reference the datasheet revision date to guarantee compliance with current environmental directives.
Select this component when a PNP transistor with 45 V rating and 100 mA continuous current capacity is required in an SOT-323 footprint. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability. Verify thermal management requirements against the 200 mW power dissipation limit in the target enclosure.
This part belongs to the BC857 series of PNP small-signal transistors from Diodes Incorporated. It serves as the complement to the BC847 NPN series. The family is designed for general-purpose switching and amplification tasks in compact electronic designs requiring surface-mount technology.
Compatible substitutes include BC857B-7-F and BC857C-7-F from Diodes Incorporated, provided the hFE gain binning aligns with circuit requirements. Other manufacturers offering equivalent SOT-323 PNP transistors with matching 45 V and 100 mA ratings may be considered after verifying pinout compatibility.