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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A UDFN14123/SWP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：450 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-UDFN
- Supplier Device Package：U-DFN1412-3/SWP (Type A)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC857AFSWQ-7 is a PNP bipolar junction transistor manufactured by Diodes Incorporated. It utilizes epitaxial die construction and is housed in an SOT-323 surface-mount package. The device is qualified to AEC-Q101 standards for automotive applications. Key electrical ratings include a maximum collector-emitter voltage of -45 V, a maximum collector current of -100 mA, and a power dissipation of 200 mW. The 'A' suffix indicates a specific DC current gain binning range, while the 'Q' suffix denotes AEC-Q101 qualification.
Feature Summary
- Qualified to AEC-Q101 automotive reliability standards
- Utilizes epitaxial die construction technology
- Compliant with RoHS directives and halogen-free requirements
Applications
- Automotive general-purpose switching circuits
- Signal amplification in vehicle electronics
- Driver stages for low-power loads
Procurement Notes
Verify the complete part number against official Diodes Incorporated documentation to confirm the specific hFE binning associated with the 'A' suffix and the AEC-Q101 qualification indicated by the 'Q' suffix. Ensure the SOT-323 package matches the design footprint. Cross-reference the datasheet revision date to ensure compliance with current environmental regulations.
Selection Notes
Select this component when an automotive-grade PNP transistor is required within an SOT-323 footprint. The AEC-Q101 qualification ensures suitability for harsh automotive environments. Compare the specific gain binning requirements against the datasheet specifications to ensure compatibility with the target circuit's biasing needs.
Part Context
This component belongs to the BC857 series of PNP small-signal transistors produced by Diodes Incorporated. The series offers complementary NPN types and is designed for general-purpose switching and amplification. The specific variant integrates automotive qualification standards into the standard high-reliability BJT architecture.
Replacement Considerations
Compatible substitutes include other AEC-Q101 qualified PNP transistors in the SOT-323 package from Diodes Incorporated or other manufacturers, provided they meet the -45V VCEO and -100mA Ic ratings.
