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The BC857AMTF is a PNP epitaxial silicon transistor manufactured by onsemi, formerly Fairchild Semiconductor. It operates with a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device features a DC current gain (hFE) ranging from 110 to 220 and a transition frequency of 150 MHz. Packaged in an SOT-23 surface-mount configuration, it dissipates up to 310 mW at 25°C ambient temperature.
Verify the part number against ON Semiconductor's updated nomenclature systems, as legacy Fairchild underscores may have been converted to dashes. Confirm that the specific ordering suffix corresponds to the required hFE classification and tape-and-reel packaging format before finalizing procurement orders.
Select this component when a low-noise PNP transistor with moderate current handling is required for surface-mount designs. Ensure the application voltage does not exceed the -45 V collector-emitter rating and verify that the thermal environment supports the specified power dissipation limits within the SOT-23 package constraints.
This device belongs to the BC856-BC860 series of PNP epitaxial transistors. It serves as the complement to the BC846-BC850 NPN series. The 'A' suffix indicates a specific DC current gain binning range, while 'MTF' denotes the SOT-23 package type with tape-and-reel delivery.
BC857ALT1G
The minimum DC current gain (hFE) is 110, with a maximum value of 220 under standard test conditions.
Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
Yes, it has a current gain bandwidth product (fT) of 150 MHz, making it appropriate for general-purpose high-frequency switching and amplification.