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The BC857AT,115 is a PNP general-purpose transistor manufactured by Nexperia (formerly NXP Standard Product business). It is housed in an SC-75 (SOT416) plastic surface-mount package. The device supports a maximum collector current of 100 mA and features a collector-emitter voltage rating of -45 V. Key electrical characteristics include a DC current gain (hFE) ranging from 125 to 250 at a collector current of -2 mA, and a transition frequency of 100 MHz. The component operates within a junction temperature range up to 150 °C.
Verify the manufacturer status carefully, as the former NXP Standard Product business was rebranded as Nexperia. Confirm that the ordering suffix ',115' corresponds to the specific tape-and-reel packaging configuration required for your assembly line. Ensure compatibility with the SC-75 (SOT416) footprint during PCB layout validation.
Select this component when a PNP transistor with a -45 V collector-emitter breakdown voltage is required. The BC857AT variant provides a minimum DC current gain of 125, which is suitable for standard amplification needs. Consider the SOT416 package dimensions if space constraints are a primary design factor.
This part belongs to the BC857T series of PNP general-purpose transistors. It serves as the complement to the BC847T NPN series. The 'AT' designation specifically indicates the hFE binning range of 125 to 250. The device is widely used in discrete semiconductor applications requiring small-signal processing.
The BC857BT and BC857CT are available within the same series but feature different DC current gain ranges. Verify that the alternative gain specifications meet the circuit requirements before substitution.
The marking code for the BC857AT is 3E.
The thermal resistance from junction to ambient in free air is 833 K/W.
The peak collector current (ICM) is rated at -200 mA.