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The BC857AW_R1_00001 is a PNP general-purpose bipolar junction transistor manufactured by Panjit International Inc. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current of 200 mA with a continuous rating of -100 mA. Power dissipation is rated at 330 mW, and the gain-bandwidth product (fT) reaches 200 MHz. The component operates within a temperature range of -55°C to +150°C.
Verify the specific part number BC857AW_R1_00001 against official Panjit documentation to confirm technical parameters. Ensure compatibility with SOT-23-3 footprints during design integration. Check for RoHS compliance status through manufacturer datasheets. Confirm availability and lead times directly with authorized distributors or the manufacturer.
Select this component for designs requiring a PNP transistor with 45 V collector-emitter voltage and 100 mA continuous current capability. The SOT-23-3 package suits space-constrained PCB layouts. Verify that the required hFE range aligns with circuit gain requirements. Consider thermal management for power dissipation limits up to 330 mW in enclosed environments.
This component belongs to the GPT-03TP series of general-purpose transistors from Panjit. It serves as a standard discrete semiconductor device for analog and digital switching tasks. The part is distinct from automotive-qualified variants like the BC857CW-AU series. It represents a common solution for mass-market electronic manufacturing.
Public confirmed substitute part numbers are not available in the provided source material.