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The Nexperia BC857B/DG/B4R is a PNP general-purpose bipolar junction transistor (BJT) housed in an SOT-363 (SC-88) surface-mount package. It features a dual common-emitter configuration with two independent PNP transistors sharing a single base terminal. Key electrical parameters include a maximum collector current of 100 mA, a collector-emitter voltage of 45 V, and a collector-base voltage of 50 V. The device operates within a temperature range of -55°C to +150°C, with a total power dissipation of 225 mW.
Verify the specific suffix against official Nexperia documentation to confirm pinout compatibility and hFE binning. Ensure the ordering code matches the required tape-and-reel quantity or cut-tape format. Confirm RoHS compliance status and AEC-Q101 qualification if automotive reliability is required for the final assembly.
Select this component when a dual PNP solution with a shared base is needed to reduce footprint. Compare total power dissipation limits against thermal constraints. Verify that the 45V breakdown voltage meets the circuit requirements. Consider the SOT-363 package dimensions for PCB layout optimization compared to discrete single transistors.
This part belongs to the BC857 family of general-purpose NPN/PNP complementary pairs. The BC857B variant specifically denotes a standard DC current gain bin. The DG/B4R suffix indicates the specific packaging and reel configuration used by Nexperia for distribution through authorized channels.
Pin 1 is Base, Pin 2 is Emitter 1, and Pin 3 is Collector 1. Pin 4 is Collector 2, Pin 5 is Emitter 2, and Pin 6 is Base.
Yes, both PNP transistors share a single common base terminal, which simplifies biasing in certain dual-switching applications.