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The BC857BB5000 is a single PNP bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount PG-SOT23 package. The device supports a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. Key electrical characteristics include a transition frequency of 250 MHz, a power dissipation rating of 330 mW, and a DC current gain ranging from 220 to 475. It operates within a temperature range of -65°C to +150°C.
Verify the component status as End-of-Life or obsolete through official Infineon channels before finalizing design-in decisions. Confirm that the PG-SOT23 package dimensions match the target PCB footprint. Ensure compliance with RoHS directives and check for any specific material content declarations required for the intended market regulations.
Select this component when a single PNP transistor with moderate current handling and high gain is required in a compact SMD form factor. Compare against alternative BJT families if higher voltage ratings or different packaging constraints are necessary. Validate that the 100 mA current limit aligns with the specific load requirements of the application circuit.
This part belongs to the BC857 series of small-signal transistors designed for versatile electronic applications. The BB5000 suffix typically denotes specific binning or packaging variations within the standard BC857 product line. It serves as a fundamental discrete semiconductor component widely used in consumer electronics and industrial control systems.
Consult official Infineon documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substituting.