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The BC857BE6327HTSA1 is a single PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It operates with a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device features a DC current gain range from 220 to 475 and a transition frequency of 250 MHz. Power dissipation is rated at 330 mW, with an operating temperature range spanning from -65 °C to +150 °C. It is housed in an SOT-23-3 surface-mount package and holds AEC-Q100 automotive qualification.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix matches the required gain binning. Check current lifecycle status as obsolescence notices may apply. Ensure storage conditions comply with moisture sensitivity levels prior to soldering. Validate RoHS compliance documentation for regulatory adherence.
Select this component when automotive qualification is mandatory for PNP switching tasks. Compare gain ranges against circuit requirements to ensure adequate amplification. Consider the SOT-23-3 footprint constraints during PCB layout. Evaluate power dissipation limits relative to ambient thermal conditions. Verify voltage ratings exceed peak operational stresses in the target design.
This part belongs to the BC857 series of general-purpose PNP transistors. It shares the SOT-23-3 form factor with other variants in the lineup but differs in gain classification and automotive certification. The E6327HTSA1 suffix indicates specific tape-and-reel packaging and manufacturing traceability standards defined by Infineon.
Direct substitutes include BC857B variants without the automotive suffix if qualification is not critical. Cross-reference with other manufacturers' SOT-23 PNP transistors having matching 45V and 100mA ratings. Verify pinout compatibility before substitution.