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The BC857BLP4-7B is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an X2-DFN1006-3 surface-mount package. It features a collector-emitter breakdown voltage of -45V and a maximum collector current of -100mA. The device offers a power dissipation rating of 1W when mounted on a large copper pad and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 220 to 475 at -2mA, a transition frequency of 100MHz, and low saturation voltages.
Verify the specific ordering suffix '-7B' corresponds to the 10,000-piece reel configuration as documented in the manufacturer's ordering information. Confirm that the required packaging quantity aligns with production volume needs before finalizing procurement orders.
Select this component when a compact PNP transistor with high thermal performance is required. The 1W power dissipation capability depends on adequate copper pad mounting; ensure the PCB layout supports the necessary thermal dissipation for optimal operation under load conditions.
This part belongs to the BC857BLP4 series, which includes complementary NPN types such as the BC847BLP4. The series utilizes epitaxial die construction and is designed for high-reliability applications. The BC857BLP4-7B variant specifically denotes the bulk reel packaging option for high-volume manufacturing integration.
The BC857BS-7-F is a dual PNP BJT in an SOT-363 package. While it shares similar voltage and current ratings, it differs in configuration and physical dimensions. Verify pinout compatibility and thermal requirements before substitution.