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The BC857BLP4Q-7B is a single PNP bipolar junction transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device has a transition frequency of 100 MHz and a power dissipation rating of 250 mW. It is housed in an X2-DFN1006-3 surface-mount package with dimensions of 1.0 mm x 0.6 mm. The component operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific suffix 'Q' indicates AEC-Q101 qualification status against the official manufacturer datasheet. Confirm the package designation matches the X2-DFN1006-3 specification. Ensure the ordering code aligns with the intended automotive or industrial grade requirements before finalizing procurement.
Select this component when automotive reliability certification is mandatory alongside minimal physical dimensions. Compare the 250 mW power dissipation limit against thermal management capabilities in the target application. Verify that the 100 mA current rating meets the load requirements without exceeding saturation limits.
This part belongs to the BC857 series of small-signal transistors from Diodes Incorporated. It serves as the PNP counterpart to the BC847BLP4Q-7B NPN device. The series is designed for surface-mount applications where space efficiency and automotive-grade durability are primary design drivers.
Direct substitutes include BC857BLP4-7 for non-automotive grades. For identical automotive qualification, verify availability of BC857BLP4Q-7. Cross-reference pinouts and electrical parameters to ensure compatibility.