ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A SOT-883
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：SOT-883
- Grade：-
- Qualification：-
Download product information
Overview
The BC857BM,315 is a PNP general-purpose transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-883B (DFN1006B-3) surface-mount package. Key electrical parameters include a maximum DC collector current of 100 mA, a collector-emitter voltage (VCEO) of 45 V, and a collector-base voltage (VCBO) of 50 V. The device features a minimum emitter-base voltage (VEBO) of 6 V, a power dissipation (Pd) of 250 mW, and a transition frequency (fT) of 100 MHz. It operates within a temperature range of -65 °C to +150 °C.
Feature Summary
- Provides matched current gain characteristics for precision analog applications
- Features internal isolation within an ultra-small flat lead plastic package
- Designed as a drop-in replacement for standard double transistors
Applications
- Current mirror circuits
- Differential amplifier stages
- General-purpose switching applications
Procurement Notes
Verify the specific suffix against official Nexperia documentation to confirm package type and binning. Confirm availability status as distribution data may vary. Ensure compliance with RoHS and REACH directives relevant to your region. Check for end-of-life notifications or recommended new design statuses before finalizing procurement plans.
Selection Notes
Select this component when a compact PNP transistor with matched characteristics is required. The DFN1006B-3 package offers space efficiency compared to traditional SOT-23 options. Consider the 45 V rating and 100 mA current limit for low-power signal processing tasks requiring high gain matching.
Part Context
This part belongs to the Nexperia BC857 series of PNP general-purpose transistors. The series includes variants with different gain bins and packaging options. The BC857BM specifically denotes a matched pair configuration suitable for balanced circuit designs requiring consistent performance across both transistors.
FAQ
What is the package type for the BC857BM,315?
The BC857BM,315 is packaged in an SOT-883B (also known as DFN1006B-3) surface-mount device package.
Is the BC857BM a single transistor or a dual transistor?
The BC857BM is a dual PNP transistor configured as a matched pair within a single package.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) for the BC857BM is 45 V.
