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The BC857BMB,315 is a PNP general-purpose transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-666 (SOT6) surface-mount package with six terminals. The device supports a maximum DC collector current of 100 mA and features a collector-emitter voltage rating of 45 V. Additional electrical limits include a collector-base voltage of 50 V and an emitter-base voltage of 5 V. Power dissipation is rated at 300 mW, with a transition frequency of 175 MHz. Operating temperatures range from -65 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Ensure design-in approval aligns with current production lifecycle recommendations before finalizing procurement plans.
Select this component when a dual PNP configuration is required in a minimal footprint. Compare power dissipation ratings against single-transistor alternatives like the BC857B,215 if space constraints allow. Verify that the 175 MHz transition frequency meets the specific bandwidth requirements of the target application circuit.
This part belongs to the BC857 series of PNP general-purpose transistors. It serves as a complementary device to NPN counterparts such as the BC847AMB. The SOT-666 package offers board space savings compared to traditional SOT-23 configurations while maintaining comparable power handling capabilities for small-signal operations.
Publicly confirmed substitute part numbers are not available in the provided source material.