BC857BQBZ

$0.18

Description：TRANS 45V 0.1A DFN1110D-3
Series：-

SKU:54039c188a33 Category: Single Bipolar Transistors Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS 45V 0.1A DFN1110D-3
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：-
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
Power - Max：340 mW
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：3-XDFN Exposed Pad
Supplier Device Package：DFN1110D-3
Grade：Automotive
Qualification：AEC-Q101

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BC857BQBZ

Overview

The Nexperia BC857BQBZ is a PNP small-signal bipolar junction transistor (BJT) designed for surface-mount applications. It utilizes the DFN1110D-3 package, providing a compact footprint with dimensions of 1.1mm x 1.0mm. The device features a maximum collector-emitter voltage (VCEO) of 45V and a collector-base voltage (VCBO) of 50V. It supports a continuous collector current of 100mA and offers a minimum DC current gain (hFE) of 220 in the B grading bin. The component operates within a temperature range of -65°C to +150°C and complies with RoHS standards.

Feature Summary

Compact DFN1110D-3 surface-mount package for space-constrained designs
High DC current gain ensuring efficient signal amplification
Robust thermal performance with extended operating temperature range

Applications

General-purpose switching circuits
Small-signal amplification stages
Logic level translation interfaces

Procurement Notes

Verify the specific suffix 'QBZ' against official Nexperia documentation to confirm the DFN1110D-3 package and B-bin hFE characteristics. Ensure compatibility with automated pick-and-place equipment due to the small form factor. Confirm end-of-life status if sourcing from secondary markets, as some variants in this series may have discontinuation notices.

Selection Notes

Select this component when a low-profile PNP transistor is required for high-density PCB layouts. The DFN1110D-3 package offers superior thermal dissipation compared to traditional SOT-23 packages. Consider the B-bin gain specification for applications requiring consistent amplification factors without extensive sorting. Evaluate thermal resistance requirements for high-power dissipation scenarios.

Part Context

This part belongs to the Nexperia BC857 family of PNP transistors, which are widely used in consumer electronics and industrial control systems. The BC857 series provides various gain bins and packaging options to suit different design constraints. The QBZ variant specifically targets modern miniaturization trends through its flat leadless DFN construction.