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The onsemi BC857BTT1 is a single PNP bipolar junction transistor (BJT) designed for surface-mount applications. It operates with a maximum collector current of 100 mA and features a collector-emitter voltage rating of 45 V, alongside a collector-base voltage of 50 V and an emitter-base voltage of 5 V. The device exhibits a transition frequency of 100 MHz and a power dissipation capacity of 200 mW. It functions within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification.
Verify the specific suffix against official datasheets to confirm package type and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements if used in automotive contexts. Cross-reference pinouts carefully as SOT-416 configurations can vary between manufacturers. Confirm RoHS compliance status through the manufacturer's latest documentation before integration into final assemblies.
Select this component when a compact PNP transistor with moderate current handling and high-frequency response is required. The SOT-416 package offers space efficiency for dense PCB layouts. Consider the 200 mW power dissipation limit during thermal design. Verify that the 45 V breakdown voltage aligns with the circuit's operating conditions to prevent overstress failures.
This part belongs to the BC857 series of small-signal PNP transistors manufactured by onsemi. It serves as a surface-mount alternative to through-hole variants like the BC214. The series is widely utilized in portable devices and automotive modules where size and reliability are critical constraints.
BC857BLT1G is a confirmed direct substitute within the same family.