BC857BWH6327XTSA1

Overview

The BC857BWH6327XTSA1 is a dual PNP bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device supports a maximum DC collector current of 200 mA, with a collector-emitter voltage (Vceo) of 30 V and a collector-base voltage (Vcbo) of 30 V.

Feature Summary

• Dual PNP configuration within a compact SMD package
• Silicon-based construction for standard switching applications

Applications

• General-purpose signal amplification
• Switching circuits requiring low power consumption

Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's datasheet. Check for end-of-life notices as availability may be restricted. Ensure the ordering part number matches the required electrical characteristics precisely before procurement.

Selection Notes

Select this component when a dual PNP transistor is required in a small footprint. Compare the 30 V breakdown voltage against circuit requirements. Evaluate the 200 mA current limit for load handling. Consider the SOT-323-3 package dimensions for PCB layout constraints relative to alternative packages.

Part Context

This component belongs to the BC857 series of dual transistors from Infineon. It shares the core BC857 architecture but is distinguished by its specific packaging and manufacturing lot identifiers. The H6327 suffix indicates specific packaging and environmental compliance attributes defined by the manufacturer.

Replacement Considerations

BC857BWHTSA1