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The BC857BWH6778XTSA1 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SOT-323 surface-mount package and operates with a maximum collector current of 100 mA. The device supports a collector-emitter voltage of 30 V and a collector-base voltage of 30 V, with an emitter-base voltage rating of 5 V. Power dissipation is rated at 310 mW. The component features a gain-bandwidth product of 250 MHz and operates within a temperature range of -65°C to +150°C.
Verify the specific suffix against official Infineon documentation to confirm exact binning or tape-and-reel specifications. Confirm availability status as distribution channels may list obsolete or limited-stock items. Ensure the ordering part number matches the required electrical characteristics and packaging format for your production line.
Select this component when a PNP transistor with 30 V breakdown voltage and 100 mA continuous current capability is required in an SOT-323 footprint. Consider the AEC-Q100 qualification if the application demands automotive reliability standards. Evaluate the 310 mW power dissipation limit against thermal management requirements in the final assembly.
This part belongs to the BC857 series of small-signal PNP transistors from Infineon. The series is widely used in consumer and industrial electronics for low-power switching and amplification. The specific model variant indicates a particular manufacturing batch or packaging configuration within the broader family of silicon planar PNP transistors designed for surface-mount technology.
Consult official Infineon substitution guides for verified equivalents. Generic replacements must match the SOT-323 package, 30 V VCEO, and 100 mA IC ratings to ensure functional compatibility without redesign.