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The BC857BWQ-13-F is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT-323 surface-mount package. It features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -100 mA. The device exhibits a low saturation voltage (VCE(sat)) of less than -650 mV at -100 mA and a transition frequency (fT) ranging from 100 MHz to 200 MHz. Power dissipation is rated at 200 mW with a thermal resistance (RθJA) of 625 °C/W. Operating temperature ranges from -55°C to +150°C.
Verify the component against the official Diodes Incorporated datasheet DS43349 Rev. 1-2 to confirm authenticity. Ensure the marking code matches K3B for the BC857BWQ variant. Confirm that the reel size is 13 inches and the quantity per reel is 10,000 units. Validate compliance with RoHS directives and IATF16949 manufacturing standards before integration into production lines.
Select this component when designing circuits that require a PNP transistor with a minimum breakdown voltage of 45 V and a collector current capacity of 100 mA. It is suitable for applications demanding low saturation voltage and high reliability in automotive environments. Consider the SOT-323 package dimensions and thermal characteristics for PCB layout optimization.
This part belongs to the BC857 series of PNP small signal transistors produced by Diodes Incorporated. The 'BWQ' suffix indicates the specific binning and packaging configuration, while '-13-F' denotes the 13-inch tape and reel packaging format with a quantity of 10,000 units per reel. The Q suffix typically signifies automotive qualification within the manufacturer's nomenclature.
BC857BW
The maximum power dissipation is 200 mW at an ambient temperature of +25°C.
Yes, the BC857BWQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
The DC current gain (hFE) ranges from a minimum of 220 to a maximum of 475 at VCE = -5.0V and IC = -2.0mA.