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The onsemi BC857BWT1G is a PNP silicon general-purpose transistor designed for low-power surface mount applications. It features an S and NSV prefix indicating suitability for automotive and unique site control requirements, with AEC-Q101 qualification and PPAP capability. The device is housed in the SC-70/SOT-323 package. Key electrical parameters include a collector-emitter voltage of -45 V, a continuous collector current of -100 mA, and a DC current gain (hFE) range of 220 to 450 at specific test conditions. It operates within a junction temperature range of -65°C to +150°C and is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Verify the presence of the 'S' or 'NSV' prefix in the ordering suffix to confirm AEC-Q101 qualification and PPAP capability. Ensure the component matches the SC-70/SOT-323 package outline. Confirm RoHS compliance status through the manufacturer's official documentation before integration into regulated assemblies.
Select this component when AEC-Q101 qualification and PPAP capability are mandatory for the application. It is suitable for designs requiring a PNP transistor in a compact SC-70/SOT-323 package with a -45 V collector-emitter voltage rating. Consider complementary NPN types like the BC847 series if differential pairs are needed.
This component belongs to the BC856/BC857/BC858 family of general-purpose PNP transistors manufactured by onsemi. The BC857 variant specifically offers a medium current gain range compared to the BC856 (high gain) and BC858 (low gain). The WT1G suffix denotes the tape and reel packaging format for automated assembly.
Direct substitutes include BC857BW-G from Comchip Technology and BC857CWH6327XTSA1 from Infineon Technologies. Verify pinout compatibility and electrical parameter overlaps before substitution.