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The BC857C is a PNP general-purpose small-signal transistor manufactured by Diotec Semiconductor in an SOT-23 surface-mount package. It features a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous DC collector current of -100 mA with a peak collector current of -200 mA. Power dissipation is rated at 300 mW when mounted on a PCB with minimum recommended pad layout. The junction temperature range spans from -55°C to +150°C. As the 'C' suffix variant, it belongs to the highest current gain group, offering a DC current gain (hFE) range of 420 to 800 at IC = -2 mA.
Verify the specific ordering code against the manufacturer's official documentation to confirm the commercial grade designation associated with the '-C' suffix. Ensure that the required current gain specifications align with the Group C parameters defined in the datasheet before finalizing procurement decisions.
Select this component for designs requiring high DC current gain within a compact SOT-23 footprint. Consider the thermal resistance characteristics based on the intended mounting configuration, as power dissipation ratings vary between commercial and industrial grades. Verify compatibility with complementary NPN transistors if used in push-pull configurations.
This part belongs to the BC856...BC860 series of universal PNP transistors produced by Diotec Semiconductor. The series includes various gain groups and voltage ratings across different packages like SOT-23 and TO-236. The BC857C specifically targets applications needing higher gain compared to the A and B variants within the same voltage class.
Check for equivalent parts from other manufacturers such as Nexperia or onsemi that match the 45V VCEO rating and SOT-23 package. Ensure the replacement device meets the specific hFE requirements of Group C (420-800) if high gain is critical to the circuit design.