BC857C,215

Overview

The BC857C,215 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount plastic package. The device supports a maximum continuous collector current of 100 mA with a power dissipation rating of 250 mW. Key voltage ratings include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The component features a gain-bandwidth product (fT) of 100 MHz and a minimum DC current gain (hFE) of 420 at 2 mA and 5 V. It operates within a temperature range of -65 °C to +150 °C.

Feature Summary

• PNP polarity configuration for single-switching applications
• High DC current gain ensuring efficient signal amplification
• Ultra-small SOT-23 surface-mount footprint for space-constrained designs

Applications

• General-purpose switching circuits
• Signal amplification stages
• Driver circuits for low-power loads

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a PNP transistor with high current gain and moderate voltage ratings is required in a compact form factor. Ensure the application voltage does not exceed 45 V between collector and emitter. Consider thermal management if operating near the 250 mW power dissipation limit. Verify that the required hFE meets the minimum specification of 420 for the intended circuit bias conditions.

Part Context

This part belongs to the BC857 series of PNP transistors from Nexperia, designed as general-purpose devices. It serves as the complementary counterpart to the NPN BC847C transistor. The series is widely used in consumer electronics and industrial equipment where small size and reliable performance are prioritized. The BC857C variant specifically offers higher current gain compared to A or B grades.

Replacement Considerations

BC857B,215 offers lower gain; BC859C,215 has reduced voltage ratings.