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The BC857C,235 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 45 V, a maximum collector-base voltage of 50 V, and an emitter-base voltage of 5 V. The device supports a maximum DC collector current of 100 mA with a power dissipation of 250 mW. It features a gain-bandwidth product of 100 MHz and a minimum DC current gain of 420 at 2 mA and 5 V. Operating temperatures range from -65 °C to +150 °C.
Verify the specific suffix
Select this component when a PNP transistor with high current gain is required for low-power switching or amplification tasks. The SOT-23 package facilitates automated surface-mount assembly. Ensure the circuit voltage does not exceed the 45 V collector-emitter rating and that thermal management accommodates the 250 mW power dissipation limit within the specified temperature range.
This part belongs to the Nexperia BC857 series of general-purpose PNP transistors, which are designed as complements to the BC847 NPN series. The series offers multiple gain grades (A, B, C) to suit different amplification requirements while maintaining standard pinouts and packaging for easy interchangeability in existing designs.
Direct functional substitutes include other BC857C variants in the same SOT-23 package, such as those from different manufacturers adhering to identical pinout and electrical specifications. Verify package compatibility and gain binning before substitution.