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The BC857CB5000 is a general-purpose PNP bipolar junction transistor manufactured by Infineon Technologies. It operates with a maximum collector current of 100 mA and features a high DC current gain (hFE) ranging from 420 to 800. The device supports a transition frequency of 250 MHz and withstands a collector-emitter voltage of 45 V. Packaged in the PG-SOT23 surface-mount format, it dissipates up to 330 mW and functions within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix B5000 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMT assembly processes for the PG-SOT23-3 package. Cross-reference the part number with current lifecycle status reports to confirm availability and end-of-life constraints before finalizing procurement plans.
Select this component when high current gain is required for low-level signal processing. The wide hFE range allows for flexible biasing designs without strict binning requirements. Consider the thermal dissipation limits and package size constraints relative to the PCB layout. Verify that the 45 V breakdown voltage meets the circuit's maximum operational stress conditions.
This component belongs to the BC857 series of general-purpose transistors. It serves as a PNP counterpart to NPN variants like the BC847. The series is widely used in consumer electronics and industrial control systems due to its reliability and standardized pinout configuration across multiple manufacturers.
Compatible substitutes include BC857B and BC857C from various manufacturers, provided they match the PG-SOT23 package and electrical ratings. Verify pinout compatibility and hFE binning requirements before substitution.