BC857CDW1T1

$0.03

Description：TRANS 2PNP 45V 100MA SC88/SC70
Series：-

SKU:5c3f43432833 Category: Bipolar Transistor Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS 2PNP 45V 100MA SC88/SC70
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：45V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：380mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-88/SC70-6/SOT-363
Grade：-
Qualification：-

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BC857CDW1T1

Overview

The onsemi BC857CDW1T1 is a dual general-purpose PNP transistor housed in the SOT-363/SC-88 surface-mount package. It contains two independent PNP transistors with a collector-emitter voltage (VCEO) of -45 V and continuous collector current (IC) of -100 mA. The device features a minimum DC current gain (hFE) of 420 at IC = -10 mA, VCE = -5 V. Electrical characteristics include a collector-base breakdown voltage (VCBO) of -50 V and an emitter-base breakdown voltage (VEBO) of -5.0 V. Thermal resistance from junction to ambient is 328 °C/W, with an operating temperature range of -55°C to +150°C.

Feature Summary

Dual PNP configuration within a single ultra-small surface mount package for space-constrained designs
High DC current gain suitable for low-current amplifier applications
Lead-free and RoHS compliant construction

Applications

General purpose amplifier circuits
Low power surface mount applications
Switching applications requiring small form factor

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and compliance status. Ensure the component matches the required electrical parameters for the target circuit design before integration. Cross-reference the datasheet revision date to validate the accuracy of the provided specifications.

Selection Notes

Select this component when a dual PNP transistor solution is required in a compact SOT-363 footprint. Consider the -45 V collector-emitter voltage rating and -100 mA continuous current limit during circuit planning. Verify that the hFE range meets the amplification requirements of the specific application environment.

Part Context

This part belongs to the BC856BDW1T1, BC857BDW1T1 Series, and BC858CDW1T1 Series family of preferred devices manufactured by onsemi. These transistors are designed specifically for general-purpose amplifier applications utilizing the SC-88 package structure.