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The BC857CQAZ is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device features a gain bandwidth product of 100 MHz and a power dissipation rating of 280 mW. It is housed in a DFN-1010D-3 (SOT1215) surface-mount package. The component is qualified to AEC-Q101 standards for automotive applications and supports an operating temperature range from -55°C to +150°C.
Verify the specific suffix 'Z' against official Nexperia documentation to confirm reel packaging specifications. Ensure the part number matches the DFN-1010D-3 package variant. Confirm AEC-Q101 qualification status through the manufacturer datasheet before procurement. Cross-reference the 934069072147 ordering code for accuracy.
Select this component when an automotive-qualified PNP transistor is required in a compact footprint. The DFN-1010D-3 package offers space efficiency compared to traditional SOT packages. Verify that the 45 V voltage rating and 100 mA current capacity align with circuit requirements. Consider the thermal performance limits defined by the 280 mW power dissipation rating.
This device belongs to the BC857 series of PNP general-purpose transistors. It serves as the complement to the BC847 NPN series. The C suffix indicates a specific current gain selection group within the family. The QAZ designation denotes the automotive qualification and specific tape-and-reel packaging configuration.
BC857CQA/SOT1215/DFN1010D-3
The maximum collector-emitter voltage (VCEO) is 45 V.
Yes, the component is qualified according to the AEC-Q101 standard.
It utilizes a DFN-1010D-3 (SOT1215) leadless Surface-Mounted Device plastic package.